Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030834
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dc.titleAluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
dc.contributor.authorPu, J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKim, S.-J.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:23:33Z
dc.date.available2014-10-07T04:23:33Z
dc.date.issued2009
dc.identifier.citationPu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J. (2009). Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices. IEEE Transactions on Electron Devices 56 (11) : 2739-2745. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030834
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81946
dc.description.abstractAluminum-doped gadolinium oxides GdAlOx are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al2O3 blocking layer. The optimization of Al percentage in GdAlOx, as well as charge loss mechanism in the memory cell device, has also been systematically studied. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2030834
dc.sourceScopus
dc.subjectFlash memory
dc.subjectGdAlOx blocking layer
dc.subjectPolysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS)
dc.subjectRetension
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2009.2030834
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue11
dc.description.page2739-2745
dc.description.codenIETDA
dc.identifier.isiut000271019500047
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