Please use this identifier to cite or link to this item: https://doi.org/10.1109/22.993423
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dc.titleA novel drain current I-V model for MESFET
dc.contributor.authorOoi, B.-L.
dc.contributor.authorMa, J.Y.
dc.contributor.authorLeong, M.S.
dc.date.accessioned2014-10-07T04:22:58Z
dc.date.available2014-10-07T04:22:58Z
dc.date.issued2002-04
dc.identifier.citationOoi, B.-L., Ma, J.Y., Leong, M.S. (2002-04). A novel drain current I-V model for MESFET. IEEE Transactions on Microwave Theory and Techniques 50 (4) : 1188-1192. ScholarBank@NUS Repository. https://doi.org/10.1109/22.993423
dc.identifier.issn00189480
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81896
dc.description.abstractThe conventional approach for modeling the dc I-V characteristics of a MESFET transistor usually adopts the hyperbolic tangent dependence on V ds. On the contrary, our new empirical model describes the device drain current as a polynomial of effective gate-source voltage V eff. The derived model is capable of accurately model the subthreshold effect and the device current-voltage behavior at different operating regions, in particular, the device operation around the pinchoff region. Measured and modeled results of a 0.5-μm gatelength MESFET device are compared and good agreement has been obtained. Comparisons between the proposed model, Curtice model, Chalmers model, and Parker model are also made in this paper. In addition, a single-stage class-AB amplifier was built with a commercial high-power MESFET transistor to verify the new model.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/22.993423
dc.sourceScopus
dc.subjectLarge-signal model
dc.subjectMESFET
dc.subjectNonlinear model
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/22.993423
dc.description.sourcetitleIEEE Transactions on Microwave Theory and Techniques
dc.description.volume50
dc.description.issue4
dc.description.page1188-1192
dc.description.codenIETMA
dc.identifier.isiut000174974300015
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