Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.914100
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dc.titleA double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, G.H.
dc.contributor.authorChan, L.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:22:33Z
dc.date.available2014-10-07T04:22:33Z
dc.date.issued2008-02
dc.identifier.citationToh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2008-02). A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance. IEEE Electron Device Letters 29 (2) : 189-191. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914100
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81860
dc.description.abstractIn this letter, a double-spacer (DS) design is utilized for the formation of shallow source and lightly doped drain to further optimize the impact-ionization MOS (I-MOS) transistor structure. The breakdown voltage VBD needed for avalanche breakdown is lowered due to the shallow source extension. With the formation of the lightly doped drain extension, the impact of drain bias on breakdown voltage, and hence, the threshold voltage VT is also reduced. The DS I-MOS is fabricated and characterized. Detailed analysis and physical explanation of the impact of drain/gate bias on the device characteristics are provided. Compared to the conventional I-MOS transistor, the shallow source extension reduces the breakdown voltage [drain-induced breakdown voltage lowering (DIBVL)] by 0.3-0.6 V, and the lightly doped drain extension reduces the DIBVL up to 0.17 V/V. In addition, excellent subthreshold swing and good device performance are achieved. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.914100
dc.sourceScopus
dc.subjectDevice optimization
dc.subjectImpact ionization
dc.subjectImpact-ionization MOS (I-MOS)
dc.subjectSubthreshold swing
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.914100
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue2
dc.description.page189-191
dc.description.codenEDLED
dc.identifier.isiut000252622800018
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