Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.48.04C156
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dc.titleA computational study on the device performance of Graphene Nanoribbon resonant tunneling diodes
dc.contributor.authorTeong, H.
dc.contributor.authorLam, K.-T.
dc.contributor.authorLiang, G.
dc.date.accessioned2014-10-07T04:22:29Z
dc.date.available2014-10-07T04:22:29Z
dc.date.issued2009-04
dc.identifier.citationTeong, H., Lam, K.-T., Liang, G. (2009-04). A computational study on the device performance of Graphene Nanoribbon resonant tunneling diodes. Japanese Journal of Applied Physics 48 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.04C156
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81855
dc.description.abstractDevice performance of semiconducting graphene nanoribbon resonant tunneling diodes (GNR RTDs) with different shapes and dimensions was investigated using the real space, π-orbital tight-binding approach embedded in non-equilibrium Green's function formalism. The robustness of the device operating mechanism of GNR RTDs was demonstrated with their peak currents occurring at a similar bias (Vpeak) regardless of the shapes and temperatures. Furthermore, the impact of different ribbon widths at the contact/channel regions, which resulted in the different electronic structures, on electron transport was investigated at low temperature. A decrease in the channel width was found to increase the drive current while an increase in the contact width degraded it. The peak to valley ratio was degraded for both cases, while the Vpeak was increased. This study suggests that the device performance of GNR RTDs can be tuned by varying the ribbon width at the different sections, thereby providing great flexibility in future circuit designs. © 2009 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.48.04C156
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.48.04C156
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume48
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000265652700157
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