Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.888669
DC FieldValue
dc.titleA comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
dc.contributor.authorYu, X.
dc.contributor.authorYu, M.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:22:23Z
dc.date.available2014-10-07T04:22:23Z
dc.date.issued2007-02
dc.identifier.citationYu, X., Yu, M., Zhu, C. (2007-02). A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications. IEEE Transactions on Electron Devices 54 (2) : 284-290. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.888669
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81846
dc.description.abstractThe electrical characteristics of a novel HfTaON/SiO2 gate stack, which consists of a HfTaON film with a dielectric constant of 23 and a 10-Å SiO2 interfacial layer, have been investigated for advanced CMOS applications. The HfTaON/SiO2 gate stack provided much lower gate leakage current against SiO2, good interface properties, excellent transistor characteristics, and superior carrier mobility. Compared to HfON/SiO2, improved thermal stability was also observed in the HfTaON/SiO2 gate stack. Moreover, charge-trapping-induced threshold voltage Vth instability was examined for the HfTaON/ SiO2 and HfON/SiO2 gate stacks. The HfTaON/SiO2 gate stack exhibited significant suppression of the Vth instability compared to the HfON/SiO2, in particular, for nMOSFETs. The excellent performances observed in the HfTaON/SiO2 gate stack indicate that it has the potential to replace conventional SiO2 or SiON as gate dielectric for advanced CMOS applications.© 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2006.888669
dc.sourceScopus
dc.subjectCharge trapping
dc.subjectGate leakage current
dc.subjectHigh-Κ gate dielectric
dc.subjectInterface-state density Dit
dc.subjectMetal gate
dc.subjectMobility
dc.subjectMOSFETs
dc.subjectThermal stability
dc.subjectVth instability
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2006.888669
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume54
dc.description.issue2
dc.description.page284-290
dc.description.codenIETDA
dc.identifier.isiut000243888100015
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on May 19, 2022

WEB OF SCIENCETM
Citations

5
checked on May 19, 2022

Page view(s)

128
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.