Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2013.2278130
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dc.titleA 1- to 10-GHz RF and wideband IF cross-coupled gilbert mixer in 0.13-μm CMOS
dc.contributor.authorZijie, H.
dc.contributor.authorMouthaan, K.
dc.date.accessioned2014-10-07T04:22:16Z
dc.date.available2014-10-07T04:22:16Z
dc.date.issued2013
dc.identifier.citationZijie, H., Mouthaan, K. (2013). A 1- to 10-GHz RF and wideband IF cross-coupled gilbert mixer in 0.13-μm CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs 60 (11) : 726-730. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2013.2278130
dc.identifier.issn15497747
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81836
dc.description.abstractA modified Gilbert-cell mixer exhibiting both wideband radio-frequency (RF) and wideband IF performance is presented. With the proposed common-gate RF stage with the cross-coupled complementary transistors, a measured conversion gain of 3-8 dB over an RF band of 1-10 GHz is demonstrated, together with an RF input return loss better than 10 dB. The proposed mixer also incorporates wideband active local oscillator (LO) and IF baluns for matching and testing purposes. An IF bandwidth from 100 MHz to 1 GHz is achieved with a conversion gain variation of less than 2 dB. The measured output return loss within the IF band is better than 10 dB. Fabricated in a standard 0.13-μm CMOS technology, the chip only draws 7 mA from a 1.2-V supply due to the current reuse in the proposed RF stage. The measured input referred 1-dB compression point IP 1-dB, third-order input intercept point IIP3, and single-sideband noise figure are better than -16 dBm, -7 dBm, and 15 dB throughout the entire RF band. © 2004-2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TCSII.2013.2278130
dc.sourceScopus
dc.subjectCommon-gate (CG) radio-frequency (RF) stage
dc.subjectCross-coupled complementary transistors
dc.subjectCurrent reuse
dc.subjectWideband IF
dc.subjectWideband RF
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TCSII.2013.2278130
dc.description.sourcetitleIEEE Transactions on Circuits and Systems II: Express Briefs
dc.description.volume60
dc.description.issue11
dc.description.page726-730
dc.identifier.isiut000327251300002
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