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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81748
DC FieldValue
dc.titleSimulation of recessed channel SOI mosfet
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYip, A.
dc.date.accessioned2014-10-07T03:11:35Z
dc.date.available2014-10-07T03:11:35Z
dc.date.issued1997
dc.identifier.citationSamudra, G.S.,Yip, A. (1997). Simulation of recessed channel SOI mosfet. International Symposium on IC Technology, Systems and Applications 7 : 145-148. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81748
dc.description.abstractRecessed Channel Silicon-on-insulator (RCSOI) MOSFETs were investigated using a combined scheme using 2-D process simulator, TSUPREM-4 and 2-D device simulator, MEDICI. RCSOI design is optimised for CMOS ULSI. The figures of merit emphasised are Vthadjustment, Vth roll-off, subthreshold characteristics, suppression of parasitic effects like Rsd current drivability and hot-carrier induced degradation. An optimal RCSOI structure is recommended based on the analysis of the simulation results.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleInternational Symposium on IC Technology, Systems and Applications
dc.description.volume7
dc.description.page145-148
dc.identifier.isiutNOT_IN_WOS
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