Self-organized growth and characterization of InAs, InGaAs and InAlAs quantum dots

Abstract

A series of doped and undoped InxGa1-xAs (x = 0, 0.35, 0.5) and InxAl1-xAs (x = 0.5, 0.7) self-organized quantum dots (QD) have been directly grown on GaAs, In0.1Ga0.9As layers via S-K growth mode by molecular beam epitaxy. Their microstructure and optical properties were characterized with high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) techniques. Post-growth rapid thermal annealing (RTA) effect on microstructure and luminescence properties of InAs QD were studied. Moreover, the optical transition energies of InAs QD grown on GaAs are calculated using effective mass theory and made a direct comparison with the experimental values.