Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81608
DC FieldValue
dc.titleNonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation
dc.contributor.authorEccleston, K.W.
dc.date.accessioned2014-10-07T03:10:08Z
dc.date.available2014-10-07T03:10:08Z
dc.date.issued1997
dc.identifier.citationEccleston, K.W. (1997). Nonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation. Asia-Pacific Microwave Conference Proceedings, APMC 2 : 717-720. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81608
dc.description.abstractPopular GaAs FET large-signal drain conduction current models depend only on instantaneous terminal voltages, and ignore important phenomena that result in low frequency dispersion. To be valid at microwave frequencies, both the dc and time-varying components of current must be accurately modelled. This paper proposes a GaAs FET drain current model, which includes rate-dependent body and thermal effects, and therefore has the capability to accurately predict both the dc and time-varying components of drain current. Further, this model is particularly suited to harmonic balance simulation of microwave circuits.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleAsia-Pacific Microwave Conference Proceedings, APMC
dc.description.volume2
dc.description.page717-720
dc.description.coden280
dc.identifier.isiutNOT_IN_WOS
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