Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.359006
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dc.titleStructural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition
dc.contributor.authorChoi, W.K.
dc.contributor.authorChan, Y.M.
dc.contributor.authorLing, C.H.
dc.contributor.authorLee, Y.
dc.contributor.authorGopalakrishnan, R.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-10-07T03:06:00Z
dc.date.available2014-10-07T03:06:00Z
dc.date.issued1995
dc.identifier.citationChoi, W.K., Chan, Y.M., Ling, C.H., Lee, Y., Gopalakrishnan, R., Tan, K.L. (1995). Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition. Journal of Applied Physics 77 (2) : 827-832. ScholarBank@NUS Repository. https://doi.org/10.1063/1.359006
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81226
dc.description.abstractAn investigation of the structural properties of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films prepared by the plasma-enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x-ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and hydrogen in the films were found to be dependent on the preparation conditions. From the IR results, it is found that the Si - H bond decreases and the C - H bond increases as the film's carbon increases. The Raman spectra showed that while the Si - Si and C - C bonds can be detected in silicon-rich and carbon-rich samples, respectively, the Si - C band can only be observed in a-Si0.7C0.3:H and a-Si0.5C0.5:H. The XPS results showed that the stoichiometry calculation from the flow rates of the reacting gases was good for a-Si0.7C0.3:H but not for a-Si0.3C0.7:H. Reactive ion etching of the a-Si 1-xCx:H films showed that the etch rate was dependent on the films' carbon concentration and films prepared with acetylene as source gas were more resistive to etching compared to that prepared by butadiene. © 1995 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.359006
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.359006
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume77
dc.description.issue2
dc.description.page827-832
dc.identifier.isiutA1995QB22300055
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