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https://scholarbank.nus.edu.sg/handle/10635/81064
DC Field | Value | |
---|---|---|
dc.title | Recombination lifetime in silicon from laser microwave photoconductance decay measurement | |
dc.contributor.author | Ling, C.H. | |
dc.contributor.author | Teoh, H.K. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Zhou, T.Q. | |
dc.contributor.author | Ah, L.K. | |
dc.date.accessioned | 2014-10-07T03:04:16Z | |
dc.date.available | 2014-10-07T03:04:16Z | |
dc.date.issued | 1995 | |
dc.identifier.citation | Ling, C.H.,Teoh, H.K.,Choi, W.K.,Zhou, T.Q.,Ah, L.K. (1995). Recombination lifetime in silicon from laser microwave photoconductance decay measurement. Materials Science Forum 173-174 : 255-258. ScholarBank@NUS Repository. | |
dc.identifier.issn | 02555476 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81064 | |
dc.description.abstract | The effective minority carrier recombination lifetime in oxidized silicon wafers is measured using a laser microwave photoconductance technique. The effect of surface recombination is demonstrated through altering the silicon band bending at the oxide/silicon interface, through a non-contact injection of charges on the outer oxide surface by a corona discharge. The dependence of effective lifetime on wafer orientation and oxidation conditions is investigated. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Materials Science Forum | |
dc.description.volume | 173-174 | |
dc.description.page | 255-258 | |
dc.description.coden | MSFOE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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