Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80902
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dc.titleOptical properties of hydrogenated amorphous silicon carbide films
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-10-07T03:02:32Z
dc.date.available2014-10-07T03:02:32Z
dc.date.issued2000
dc.identifier.citationChoi, W.K. (2000). Optical properties of hydrogenated amorphous silicon carbide films. Diffusion and Defect Data. Pt A Defect and Diffusion Forum 177 : 29-42. ScholarBank@NUS Repository.
dc.identifier.issn10120386
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80902
dc.description.abstractThe influence of plasma enhanced chemical vapour deposition conditions (rf power, hydrogen dilution), hydrocarbon source material, dopants and deposition techniques on the optical properties of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were examined. The parameters used for the discussion were the optical gap, the refractive index and the edge width parameter. The photoluminescence results of a-Si1-xCx:H films were also presented in this paper.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleDiffusion and Defect Data. Pt A Defect and Diffusion Forum
dc.description.volume177
dc.description.page29-42
dc.description.codenDDAFE
dc.identifier.isiutNOT_IN_WOS
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