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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(99)00507-3
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dc.titleInvestigations on the morphology of silicon surfaces anisotropically etched with TMAH
dc.contributor.authorThong, J.T.L.
dc.contributor.authorBai, Y.
dc.contributor.authorLuo, P.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-10-07T02:59:43Z
dc.date.available2014-10-07T02:59:43Z
dc.date.issued2000-03-15
dc.identifier.citationThong, J.T.L., Bai, Y., Luo, P., Choi, W.K. (2000-03-15). Investigations on the morphology of silicon surfaces anisotropically etched with TMAH. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 177-179. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(99)00507-3
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80640
dc.description.abstractThe formation and transformation of hillocks during the anisotropic etching of (100) silicon are investigated. Hillocks start as pyramids and grow in size as the surface etches down. The main pyramid edges become bevelled in the process, and when the bevelling planes meet, 〈101〉 ledges are formed which propagate and transform the {111} faces to ones with a characteristic bow. Such bowed face hillocks appear to be quasi-stable and form the majority of the population of the hillocks observed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(99)00507-3
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMECHANICAL & PRODUCTION ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0921-5107(99)00507-3
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume72
dc.description.issue2
dc.description.page177-179
dc.description.codenMSBTE
dc.identifier.isiut000086130900026
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