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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80621
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dc.titleInterfacial polarization in Al-Y2O3-SiO2-Si capacitor
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-10-07T02:59:31Z
dc.date.available2014-10-07T02:59:31Z
dc.date.issued1993-01-01
dc.identifier.citationLing, C.H. (1993-01-01). Interfacial polarization in Al-Y2O3-SiO2-Si capacitor. Electronics Letters 29 (19) : 1676-1678. ScholarBank@NUS Repository.
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80621
dc.description.abstractThe variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleElectronics Letters
dc.description.volume29
dc.description.issue19
dc.description.page1676-1678
dc.description.codenELLEA
dc.identifier.isiutNOT_IN_WOS
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