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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80604
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dc.titleInfra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films
dc.contributor.authorHan, L.J.
dc.contributor.authorOng, T.Y.
dc.contributor.authorPrakash, S.
dc.contributor.authorChua, L.G.
dc.contributor.authorChoi, W.K.
dc.contributor.authorTan, L.S.
dc.contributor.authorLoh, F.C.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-10-07T02:59:20Z
dc.date.available2014-10-07T02:59:20Z
dc.date.issued1999
dc.identifier.citationHan, L.J.,Ong, T.Y.,Prakash, S.,Chua, L.G.,Choi, W.K.,Tan, L.S.,Loh, F.C.,Tan, K.L. (1999). Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films. Thin Solid Films 343-344 (1-2) : 441-444. ScholarBank@NUS Repository.
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80604
dc.description.abstractThe effects of furnace and rapid thermal annealing (RTA) on the electrical and structural properties of r.f. sputtered amorphous silicon carbide films were investigated. It was found that RTA has a similar effect on the structural properties of our films as compared with furnace annealing. The conductance results showed that the effect of annealing on the interface trapped charge density (Dit) for the unhydrogenated films can be explained using the conclusion obtained from the infra-red (IR) and X-ray photoelectron spectroscopy (XPS) results. © 1999 Elsevier Science S.A. All rights reserved.
dc.sourceScopus
dc.subjectAmorphous silicon carbide
dc.subjectAnnealing
dc.subjectFTIR
dc.subjectSputtering
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.sourcetitleThin Solid Films
dc.description.volume343-344
dc.description.issue1-2
dc.description.page441-444
dc.description.codenTHSFA
dc.identifier.isiutNOT_IN_WOS
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