Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6
DC FieldValue
dc.titleInfrared reflectance studies of GaN epitaxial films on sapphire substrate
dc.contributor.authorFeng, Z.C.
dc.contributor.authorHou, Y.T.
dc.contributor.authorChua, S.J.
dc.contributor.authorLi, M.F.
dc.date.accessioned2014-10-07T02:59:19Z
dc.date.available2014-10-07T02:59:19Z
dc.date.issued1999
dc.identifier.citationFeng, Z.C.,Hou, Y.T.,Chua, S.J.,Li, M.F. (1999). Infrared reflectance studies of GaN epitaxial films on sapphire substrate. Surface and Interface Analysis 28 (1) : 166-169. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6</a>
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80603
dc.description.abstractInfrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analyzing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify GaN phonons from the overlapped complicated substrate bands, and also to determine the carrier concentration even for GaN on sapphire with low and medium doping levels. In some samples, an interface layer has been demonstrated to be formed between film and substrate, which manifests itself as a damping behaviour of the interference fringes in the spectra. Detailed analysis suggests that this interface layer, with a thickness of approximately 0.14 μm estimated from a two-layer model simulation, may be due to the high density of defects caused by stress relaxation.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page166-169
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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