Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.351273
DC FieldValue
dc.titleGeneralized perturbation analysis of distortion in semiconductor lasers
dc.contributor.authorHaldar, M.K.
dc.contributor.authorKooi, P.S.
dc.contributor.authorMendis, F.V.C.
dc.contributor.authorGuan, Y.L.
dc.date.accessioned2014-10-07T02:58:10Z
dc.date.available2014-10-07T02:58:10Z
dc.date.issued1992
dc.identifier.citationHaldar, M.K., Kooi, P.S., Mendis, F.V.C., Guan, Y.L. (1992). Generalized perturbation analysis of distortion in semiconductor lasers. Journal of Applied Physics 71 (3) : 1102-1108. ScholarBank@NUS Repository. https://doi.org/10.1063/1.351273
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80496
dc.description.abstractWe have carried out a generalized perturbation analysis of the second-order nonlinear equation for photon density for semiconductor lasers. The second-order equation is obtained with minimal approximations, from the single-mode semiconductor laser rate equations, which unlike previous work, include both the effect of gain compression and the coupling of the spontaneous emission to the lasing mode. After deriving the general perturbation formula, expressions for second harmonic distortion as well as third-order intermodulation distortion are obtained. Unlike previous work which is restricted to two subcarriers, the present work gives results for an arbitrary number of subcarriers.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.351273
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.351273
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume71
dc.description.issue3
dc.description.page1102-1108
dc.identifier.isiutA1992HC90800003
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