Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0953-8984/10/3/010
DC Field | Value | |
---|---|---|
dc.title | First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets | |
dc.contributor.author | Zhang, X.H. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Xu, S.J. | |
dc.contributor.author | Fan, W.J. | |
dc.date.accessioned | 2014-10-07T02:57:31Z | |
dc.date.available | 2014-10-07T02:57:31Z | |
dc.date.issued | 1998-01-26 | |
dc.identifier.citation | Zhang, X.H., Chua, S.J., Xu, S.J., Fan, W.J. (1998-01-26). First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets. Journal of Physics Condensed Matter 10 (3) : 577-580. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/10/3/010 | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80437 | |
dc.description.abstract | The GaAs1-xPx-Al0.3Ga0.7As(001) band offsets are calculated for both the GaAs and (Al0.3Ga0.7)-(As1-xPx) interface bonds within first-principles local density functional theory. It is found that the band offsets are independent of the type of interfacial bond, while the valence band offset, VBO, decreases linearly with x as VBO = 0.143 - 0.153x eV and the inferred conduction band offset CBO (the band-gap difference minus the valence band offset) decreases linearly as CBO = 0.236 - 0.590x eV for 0.0 ≤ x ≤ 0.20. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | INST OF MATERIALS RESEARCH & ENGINEERING | |
dc.description.doi | 10.1088/0953-8984/10/3/010 | |
dc.description.sourcetitle | Journal of Physics Condensed Matter | |
dc.description.volume | 10 | |
dc.description.issue | 3 | |
dc.description.page | 577-580 | |
dc.description.coden | JCOME | |
dc.identifier.isiut | 000071819600010 | |
Appears in Collections: | Staff Publications |
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