Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/10/3/010
DC FieldValue
dc.titleFirst-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets
dc.contributor.authorZhang, X.H.
dc.contributor.authorChua, S.J.
dc.contributor.authorXu, S.J.
dc.contributor.authorFan, W.J.
dc.date.accessioned2014-10-07T02:57:31Z
dc.date.available2014-10-07T02:57:31Z
dc.date.issued1998-01-26
dc.identifier.citationZhang, X.H., Chua, S.J., Xu, S.J., Fan, W.J. (1998-01-26). First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets. Journal of Physics Condensed Matter 10 (3) : 577-580. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/10/3/010
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80437
dc.description.abstractThe GaAs1-xPx-Al0.3Ga0.7As(001) band offsets are calculated for both the GaAs and (Al0.3Ga0.7)-(As1-xPx) interface bonds within first-principles local density functional theory. It is found that the band offsets are independent of the type of interfacial bond, while the valence band offset, VBO, decreases linearly with x as VBO = 0.143 - 0.153x eV and the inferred conduction band offset CBO (the band-gap difference minus the valence band offset) decreases linearly as CBO = 0.236 - 0.590x eV for 0.0 ≤ x ≤ 0.20.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.description.doi10.1088/0953-8984/10/3/010
dc.description.sourcetitleJournal of Physics Condensed Matter
dc.description.volume10
dc.description.issue3
dc.description.page577-580
dc.description.codenJCOME
dc.identifier.isiut000071819600010
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