Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80414
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dc.titleFast ICCD imaging of KrF excimer laser induced titanium plasma plumes for silicon metallization
dc.contributor.authorHong, M.H.
dc.contributor.authorLu, Y.F.
dc.contributor.authorHo, T.M.
dc.contributor.authorLu, L.W.
dc.contributor.authorLow, T.S.
dc.date.accessioned2014-10-07T02:57:16Z
dc.date.available2014-10-07T02:57:16Z
dc.date.issued1999-01
dc.identifier.citationHong, M.H.,Lu, Y.F.,Ho, T.M.,Lu, L.W.,Low, T.S. (1999-01). Fast ICCD imaging of KrF excimer laser induced titanium plasma plumes for silicon metallization. Applied Surface Science 138-139 (1-4) : 489-493. ScholarBank@NUS Repository.
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80414
dc.description.abstractPulsed laser deposition (PLD) is applied to grow titanium thin films on silicon substrates for wafer metallization. Dynamics of plasma during the thin film deposition is investigated by fast intensified charge coupled detector (ICCD) time integrated photography. Plasma images at different gate delays after laser irradiation are taken to study plasma size, distribution, expansion and interaction with the substrates. Plume flying and expansion speeds in the directions normal and parallel to target surface are calculated. Fast ICCD imaging shows that the plasma starts to fly and expand at speeds as high as 106 cm/s and reduces gradually to zero with gate delay. The dependence of plume size and speeds on laser fluence, gate delay, target-to-substrate distance and chamber pressure is analyzed to optimize processing parameters for the thin film deposition. © 1999 Published by Elsevier Science B.V. All rights reserved.
dc.sourceScopus
dc.subjectICCD imaging
dc.subjectPlasma dynamics
dc.subjectPulsed laser deposition
dc.subjectTitanium plasma
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Surface Science
dc.description.volume138-139
dc.description.issue1-4
dc.description.page489-493
dc.description.codenASUSE
dc.identifier.isiutNOT_IN_WOS
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