Please use this identifier to cite or link to this item: https://doi.org/10.1023/A:1006679625601
DC FieldValue
dc.titleEvaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors
dc.contributor.authorCha, C.L.
dc.contributor.authorChor, E.F.
dc.contributor.authorJia, Y.M.
dc.contributor.authorBourdillon, A.J.
dc.contributor.authorGong, H.
dc.contributor.authorPan, J.S.
dc.contributor.authorZhang, A.Q.
dc.contributor.authorTang, S.K.
dc.contributor.authorBoothroyd, C.B.
dc.date.accessioned2014-10-07T02:57:09Z
dc.date.available2014-10-07T02:57:09Z
dc.date.issued1999-09-01
dc.identifier.citationCha, C.L., Chor, E.F., Jia, Y.M., Bourdillon, A.J., Gong, H., Pan, J.S., Zhang, A.Q., Tang, S.K., Boothroyd, C.B. (1999-09-01). Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors. Journal of Materials Science Letters 18 (17) : 1427-1431. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006679625601
dc.identifier.issn02618028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80403
dc.description.abstractA technique to improve the smoothness of the floating polysilicon layer of non-volatile memory devices is proposed. Via low-energy N2 + and Ar+ ion implantation onto exposed deposited-polysilicon film, SixNy and SiC are formed at the top surface of the film. These silicon impurities act as additional nucleating centers in the film, promoting growth of small surface grains in the event of a following high-temperature process step. Better planarity of the film is achieved and this implies the generation of a good interface with the subsequently deposited or thermally grown interpoly dielectric. Overall, the results are promising for the control of surface roughness by Low-Energy Ion Implantation.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1023/A:1006679625601
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1023/A:1006679625601
dc.description.sourcetitleJournal of Materials Science Letters
dc.description.volume18
dc.description.issue17
dc.description.page1427-1431
dc.description.codenJMSLD
dc.identifier.isiut000082123300018
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on May 19, 2022

WEB OF SCIENCETM
Citations

4
checked on May 11, 2022

Page view(s)

160
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.