Electrical properties of rapid thermal oxides on Si1-x-yGexCy films

Abstract

The electrical characteristics of rapid thermal oxides on Si1-x-yGexCy layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO2/Si1-x-yGexCy interface, a thin GeO2 layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×1011 to 3.6×1012 eV-1 cm-2. All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si0.887Ge0.113 than for Si1-x-yGexCy samples, and these values decrease with increasing C concentration. © 2000 American Institute of Physics.