Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80386
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dc.titleElectrical and structural properties of rapid thermal annealed amorphous silicon carbide films
dc.contributor.authorChoi, W.K.
dc.contributor.authorOng, T.Y.
dc.contributor.authorHan, L.J.
dc.contributor.authorLoh, F.C.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-10-07T02:56:58Z
dc.date.available2014-10-07T02:56:58Z
dc.date.issued1998
dc.identifier.citationChoi, W.K.,Ong, T.Y.,Han, L.J.,Loh, F.C.,Tan, K.L. (1998). Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films. Physica Status Solidi (A) Applied Research 169 (1) : 67-76. ScholarBank@NUS Repository.
dc.identifier.issn00318965
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80386
dc.description.abstractThe effect of rapid thermal annealing (RTA) on radio frequency (rf) sputtered amorphous silicon carbide films prepared under different hydrogen partial pressures (PH) was examined. The structural study showed that the effect of RTA on the film properties was similar to that of furnace annealing. Therefore, the mechanisms suggested for furnace annealing could equally be applied to the RTA case. The electrical results showed that the effects of RTA and furnace annealing on interface trapped charge density (Dit) for the unhydrogenated films can be explained satisfactorily using the conclusions obtained from the structural study. For the hydrogenated films, the influence of annealing on Dit warrants further investigation.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitlePhysica Status Solidi (A) Applied Research
dc.description.volume169
dc.description.issue1
dc.description.page67-76
dc.description.codenPSSAB
dc.identifier.isiutNOT_IN_WOS
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