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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80371
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dc.titleEffects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTD
dc.contributor.authorLim, C.H.
dc.contributor.authorChua, S.J.
dc.contributor.authorKarunasiri, G.
dc.date.accessioned2014-10-07T02:56:48Z
dc.date.available2014-10-07T02:56:48Z
dc.date.issued1998
dc.identifier.citationLim, C.H.,Chua, S.J.,Karunasiri, G. (1998). Effects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTD. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 37-41. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80371
dc.description.abstractThe effects of changing the InAlGaAs alloy composition in the contact, barrier and well layers of a DBRTD, lattice-matched to InP substrate, on the transmission curves and the PVCD have been studied. A simple RTD model, in which the applied bias is assumed to drop across the double barrier region, is used in the simulation. The Airy function formalism is used to solve the Schrodinger equation in the structure and the transfer matrix method is used to calculate the transmission coefficient, which is then used to calculate the Tsu and Esaki tunneling current. It is found that among all the structures studied, RTD with In0.52Al0.48As barriers and In0.52Al0.48As well and contact has the best performance.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page37-41
dc.description.coden267
dc.identifier.isiutNOT_IN_WOS
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