Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/30/17/007
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dc.titleDistinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorTao, J.M.
dc.contributor.authorLou, C.L.
dc.contributor.authorLeang, S.E.
dc.contributor.authorTeow, C.K.
dc.date.accessioned2014-10-07T02:56:41Z
dc.date.available2014-10-07T02:56:41Z
dc.date.issued1997-09-07
dc.identifier.citationChim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K. (1997-09-07). Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy. Journal of Physics D: Applied Physics 30 (17) : 2411-2420. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/17/007
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80361
dc.description.abstractPhoton emission spectra of double-diffused drain (DDD) and large-angle-tilt-implanted-drain (LATID) submicron n-channel MOSFETs after hot-carrier stressing under maximum substrate current lsub(max) and maximum gate current lg(max) conditions were investigated. The results showed that the difference spectra, obtained by subtracting the devices' pre-stress spectra from the post-stress spectra, could be used for distinguishing the effects of interface states and trapped charges. Interface states cause enhanced surface scattering and therefore increase the efficiency of photon emission while trapped charges drive the current away from the surface of the channel and reduce the photon emission efficiency.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0022-3727/30/17/007
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume30
dc.description.issue17
dc.description.page2411-2420
dc.description.codenJPAPB
dc.identifier.isiutA1997XW06100007
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