Characterization of rf-sputtered yttrium oxide films

Abstract

The results of current-voltage and capacitance-voltage measurements on 600 Å yttrium oxide films, prepared by rf-sputtering in 10-2 torr of argon and at substrate temperatures 300-400°C are presented. Films exhibit good leakage current characteristics after annealing in hydrogen and posses high resistivity, in excess of 1017 ohm-cm. A Poole-Frenkel conduction mechanism is observed. Permitivity is relatively independent of frequency up to 1 MHz, but drops off at higher frequencies. The dissipation factor is of the order of 0.003 over the frequency range 104- 106 Hz. C-V plots exhibit hysteresis, which is attributed to polarization. © 1992.