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|Title:||Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing||Authors:||Choi, W.K.
Rapid thermal annealing
|Issue Date:||Apr-1999||Citation:||Choi, W.K.,Kanakaraju, S.,Shen, Z.X.,Li, W.S. (1999-04). Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing. Applied Surface Science 144-145 (0) : 697-701. ScholarBank@NUS Repository.||Abstract:||We report the synthesis of nanocrystals of Ge embedded in a-SiO2 matrix by rapid thermal annealing (RTA). The films were deposited by rf-magnetron co-sputtering of Ge and SiO2 followed by RTA for 300 s. Raman studies indicate a transition of Ge from amorphous to nanocrystalline form when annealed between 700 to 800°C. The Raman spectra were analysed in terms of phonon confinement model and the estimated nanocrystal size was between 20 to 80 Å. A strong visible broad band photoluminescence was observed for the crystal size between 20 to 60 Å. The photoluminescence showed a blue shift with decrease in the nanocrystal size. The origin for the photoluminescence is discussed in terms of quantum confinement of excitons. © 1999 Elsevier Science B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/80320||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
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