Please use this identifier to cite or link to this item:
Title: Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing
Authors: Choi, W.K. 
Kanakaraju, S. 
Shen, Z.X. 
Li, W.S. 
Keywords: Nanocrystals
Raman spectroscopy
Rapid thermal annealing
Issue Date: Apr-1999
Citation: Choi, W.K.,Kanakaraju, S.,Shen, Z.X.,Li, W.S. (1999-04). Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing. Applied Surface Science 144-145 (0) : 697-701. ScholarBank@NUS Repository.
Abstract: We report the synthesis of nanocrystals of Ge embedded in a-SiO2 matrix by rapid thermal annealing (RTA). The films were deposited by rf-magnetron co-sputtering of Ge and SiO2 followed by RTA for 300 s. Raman studies indicate a transition of Ge from amorphous to nanocrystalline form when annealed between 700 to 800°C. The Raman spectra were analysed in terms of phonon confinement model and the estimated nanocrystal size was between 20 to 80 Å. A strong visible broad band photoluminescence was observed for the crystal size between 20 to 60 Å. The photoluminescence showed a blue shift with decrease in the nanocrystal size. The origin for the photoluminescence is discussed in terms of quantum confinement of excitons. © 1999 Elsevier Science B.V. All rights reserved.
Source Title: Applied Surface Science
ISSN: 01694332
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jul 5, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.