Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80315
DC FieldValue
dc.titleC-axis-textured LiNbO3 thin films on Si (111) substrates
dc.contributor.authorCheng, S.D.
dc.contributor.authorHan, X.Q.
dc.contributor.authorKam, C.H.
dc.contributor.authorZhou, Y.
dc.contributor.authorLam, Y.L.
dc.contributor.authorOh, J.T.
dc.contributor.authorXu, X.W.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T02:56:11Z
dc.date.available2014-10-07T02:56:11Z
dc.date.issued2001-10
dc.identifier.citationCheng, S.D.,Han, X.Q.,Kam, C.H.,Zhou, Y.,Lam, Y.L.,Oh, J.T.,Xu, X.W.,Chong, T.C. (2001-10). C-axis-textured LiNbO3 thin films on Si (111) substrates. Applied Physics A: Materials Science and Processing 73 (4) : 511-514. ScholarBank@NUS Repository.
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80315
dc.description.abstractWe have successfully prepared highly c-axis-textured LiNbO3 films on hydrogen-terminated Si (111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300°C for 15 min followed by a rapid thermal annealing at 500-700°C for 120s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO3 films is very useful in integrated optics devices and metal-ferroelectric-semiconductor nonvolatile memory applications.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume73
dc.description.issue4
dc.description.page511-514
dc.description.codenAPAMF
dc.identifier.isiutNOT_IN_WOS
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