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dc.titleC-axis-textured LiNbO3 thin films on Si (111) substrates
dc.contributor.authorCheng, S.D.
dc.contributor.authorHan, X.Q.
dc.contributor.authorKam, C.H.
dc.contributor.authorZhou, Y.
dc.contributor.authorLam, Y.L.
dc.contributor.authorOh, J.T.
dc.contributor.authorXu, X.W.
dc.contributor.authorChong, T.C.
dc.identifier.citationCheng, S.D.,Han, X.Q.,Kam, C.H.,Zhou, Y.,Lam, Y.L.,Oh, J.T.,Xu, X.W.,Chong, T.C. (2001-10). C-axis-textured LiNbO3 thin films on Si (111) substrates. Applied Physics A: Materials Science and Processing 73 (4) : 511-514. ScholarBank@NUS Repository.
dc.description.abstractWe have successfully prepared highly c-axis-textured LiNbO3 films on hydrogen-terminated Si (111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300°C for 15 min followed by a rapid thermal annealing at 500-700°C for 120s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO3 films is very useful in integrated optics devices and metal-ferroelectric-semiconductor nonvolatile memory applications.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
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