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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/9/4/003
DC FieldValue
dc.titleBand structure of Mg1-x ZnxSySe1-y
dc.contributor.authorTeo, K.L.
dc.contributor.authorLi, Feng Y.P.
dc.contributor.authorChong, T.C.
dc.contributor.authorXia, J.B.
dc.date.accessioned2014-10-07T02:56:03Z
dc.date.available2014-10-07T02:56:03Z
dc.date.issued1994-04
dc.identifier.citationTeo, K.L., Li, Feng Y.P., Chong, T.C., Xia, J.B. (1994-04). Band structure of Mg1-x ZnxSySe1-y. Semiconductor Science and Technology 9 (4) : 349-355. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/9/4/003
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80304
dc.description.abstractThe empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of Mg1-xZnxSySe1-y, which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. Electron and hole effective masses are calculated for different compositions. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at the Γ valley.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0268-1242/9/4/003
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume9
dc.description.issue4
dc.description.page349-355
dc.description.codenSSTEE
dc.identifier.isiutA1994NF17200003
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