Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.737470
DC FieldValue
dc.titleA Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
dc.contributor.authorLing, C.H.
dc.contributor.authorSee, L.K.
dc.date.accessioned2014-10-07T02:55:44Z
dc.date.available2014-10-07T02:55:44Z
dc.date.issued1999
dc.identifier.citationLing, C.H., See, L.K. (1999). A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K. IEEE Transactions on Electron Devices 46 (1) : 263-266. ScholarBank@NUS Repository. https://doi.org/10.1109/16.737470
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80275
dc.description.abstractThe nonstationary effects of electrons at 77 K, in the highfield saturation region of the MOSFET, are modeled by incorporating an appropriate electron temperature decrease (-ATe) to the carrier energy, within the framework of a modified lucky electron model. For a thin oxide MOSFET (Tox = 5 nm, Lg = 0.5 μm), ATe is a function of the electric field in the saturation region, and increases rapidly with drain bias. However, for a thick oxide MOSFET (Tox = 12.5 nm, Lg = 5 μm), ATe = 280 K is found to adequately describe the impact ionization rate. Our model also explains the crossover of the ionization rates in the thick oxide MOSFET at 77 K and 300 K. © 1999 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.737470
dc.sourceScopus
dc.subjectImpact ionization rate
dc.subjectLow temperature
dc.subjectMosfet's
dc.subjectNonstationary effects
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.737470
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume46
dc.description.issue1
dc.description.page263-266
dc.description.codenIETDA
dc.identifier.isiut000077769000037
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Feb 7, 2023

WEB OF SCIENCETM
Citations

4
checked on Feb 7, 2023

Page view(s)

248
checked on Feb 2, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.