Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/77712
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dc.titleStudy On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
dc.contributor.authorSUMARLINA AZZAH BTE SULEIMAN
dc.date.accessioned2014-06-30T18:00:38Z
dc.date.available2014-06-30T18:00:38Z
dc.date.issued2013-08-05
dc.identifier.citationSUMARLINA AZZAH BTE SULEIMAN (2013-08-05). Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/77712
dc.description.abstractIssues with high-k/In0.53Ga0.47As gate stack which is the high interface trap density resulting in gate stacks with low mobility, poor gate stack thermal stability and large gate leakage has been studied. Plasma-PH3/N2 treatment on HfAlO In0.53Ga0.47As MOSFET has been used to address these issues, revealing gate stack with good thermal stability up till 800?C. The improvements of peak mobility of this passivated device is attributed to the reduced trap states in the upper half of the bandgap, due to reduced free As, resulting in reduced Coulombic scattering compared to non-passivated device. The existence of a thicker passivation layer of passivated device reduces the soft optical phonon scattering contributed by the HfAlO and is effective in reducing interface dipole scattering at high E-field. Further optimization suitable for sub-22nm node In0.53Ga0.47As MOSFETs have been simulated using TCAD, using RSD structure with thin channel of 3nm thickness, high-k spacers, as well as with and without heterostructure.
dc.language.isoen
dc.subjectIn0.53Ga0.47As, HfAlO, Plasma-PH3/N2, Mobility Scattering, TCAD, sub-22nm
dc.typeThesis
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.supervisorSAMUDRA, GANESH S
dc.contributor.supervisorLEE SUNGJOO
dc.contributor.supervisorLEE SUNGJOO
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Ph.D Theses (Open)

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