Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/77291
DC FieldValue
dc.titleTight-binding recursion calculations of step energetics on the GaAs(110) surface
dc.contributor.authorChuan Kang, H.
dc.contributor.authorChen, X.F.
dc.contributor.authorTan, H.S.
dc.date.accessioned2014-06-23T05:53:13Z
dc.date.available2014-06-23T05:53:13Z
dc.date.issued1997-10-15
dc.identifier.citationChuan Kang, H.,Chen, X.F.,Tan, H.S. (1997-10-15). Tight-binding recursion calculations of step energetics on the GaAs(110) surface. Journal of Chemical Physics 107 (15) : 5914-5917. ScholarBank@NUS Repository.
dc.identifier.issn00219606
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/77291
dc.description.abstractOn the GaAs(110) surface steps perpendicular to the [001] direction may be either arsenic-terminated or gallium-terminated. We compute the energy difference between these steps using a tight-binding recursion method. We find that the arsenic-terminated step is more stable by approximately 0.5 eV. Our results suggest that some recent experimental observations on the shape of islands formed during homoepitaxy on GaAs(110) may be the consequence of an energy-driven rathar than a kinetics-driven epitaxial growth. © 1997 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.sourcetitleJournal of Chemical Physics
dc.description.volume107
dc.description.issue15
dc.description.page5914-5917
dc.description.codenJCPSA
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.