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https://doi.org/10.1021/nn9008615
DC Field | Value | |
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dc.title | Structural and electronic properties of PTCDA thin films on epitaxial graphene | |
dc.contributor.author | Huang, H. | |
dc.contributor.author | Chen, S. | |
dc.contributor.author | Gao, X. | |
dc.contributor.author | Chen, W. | |
dc.contributor.author | Wee, A.T.S. | |
dc.date.accessioned | 2014-06-23T05:50:24Z | |
dc.date.available | 2014-06-23T05:50:24Z | |
dc.date.issued | 2009-11-24 | |
dc.identifier.citation | Huang, H., Chen, S., Gao, X., Chen, W., Wee, A.T.S. (2009-11-24). Structural and electronic properties of PTCDA thin films on epitaxial graphene. ACS Nano 3 (11) : 3431-3436. ScholarBank@NUS Repository. https://doi.org/10.1021/nn9008615 | |
dc.identifier.issn | 19360851 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/77059 | |
dc.description.abstract | In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10- perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron- based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer. © 2009 American Chemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn9008615 | |
dc.source | Scopus | |
dc.subject | Epitaxial graphene | |
dc.subject | Photoemission spectroscopy | |
dc.subject | PTCDA | |
dc.subject | Scanning tunneling microscopy | |
dc.subject | Silicon carbide | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | CHEMISTRY | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1021/nn9008615 | |
dc.description.sourcetitle | ACS Nano | |
dc.description.volume | 3 | |
dc.description.issue | 11 | |
dc.description.page | 3431-3436 | |
dc.identifier.isiut | 000271951200014 | |
Appears in Collections: | Staff Publications |
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