Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays

Abstract

We have fabricated nickel-encapsulated hexagonal Boron Nitride (h-BN) nanodots on silicon (100). This was achieved by performing plasma-assisted chemical vapor deposition of h-BN on nickel nanodot array prepared by nanosphere lithography. The BN overcoat prevented the contraction of the nickel dot at high temperature and the nickel dot array retained its ferromagnetic properties. The presence of patterned nickel on the silicon substrate promoted the epitaxial growth of h-BN on silicon (100) with the basal plane oriented parallel to the silicon (100) surface. © 2003 Elsevier B.V. All rights reserved.