Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.diamond.2003.11.044
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dc.titleFerromagnetic dot encapsulated Boron Nitride nano-structured arrays
dc.contributor.authorZhang, H.
dc.contributor.authorLoh, K.P.
dc.contributor.authorChen, W.
dc.contributor.authorTan, C.K.
dc.contributor.authorKoh, Y.W.
dc.contributor.authorSow, C.H.
dc.contributor.authorLim, C.W.
dc.date.accessioned2014-06-23T05:39:30Z
dc.date.available2014-06-23T05:39:30Z
dc.date.issued2004-04
dc.identifier.citationZhang, H., Loh, K.P., Chen, W., Tan, C.K., Koh, Y.W., Sow, C.H., Lim, C.W. (2004-04). Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays. Diamond and Related Materials 13 (4-8) : 1116-1119. ScholarBank@NUS Repository. https://doi.org/10.1016/j.diamond.2003.11.044
dc.identifier.issn09259635
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/76175
dc.description.abstractWe have fabricated nickel-encapsulated hexagonal Boron Nitride (h-BN) nanodots on silicon (100). This was achieved by performing plasma-assisted chemical vapor deposition of h-BN on nickel nanodot array prepared by nanosphere lithography. The BN overcoat prevented the contraction of the nickel dot at high temperature and the nickel dot array retained its ferromagnetic properties. The presence of patterned nickel on the silicon substrate promoted the epitaxial growth of h-BN on silicon (100) with the basal plane oriented parallel to the silicon (100) surface. © 2003 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.diamond.2003.11.044
dc.sourceScopus
dc.subjectBoron Nitride
dc.subjectLithography
dc.subjectNanodots
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1016/j.diamond.2003.11.044
dc.description.sourcetitleDiamond and Related Materials
dc.description.volume13
dc.description.issue4-8
dc.description.page1116-1119
dc.description.codenDRMTE
dc.identifier.isiut000221691100111
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