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Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-3773(20000804)39:15<2740
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dc.titleEvidence for dangling bond mediated dimerization of furan on the silicon (111)-(7 x 7) surface
dc.contributor.authorCao, Y.
dc.contributor.authorWang, Z.
dc.contributor.authorDeng, J.-F.
dc.contributor.authorXu, G.Q.
dc.date.accessioned2014-06-23T05:39:04Z
dc.date.available2014-06-23T05:39:04Z
dc.date.issued2000-08-04
dc.identifier.citationCao, Y.,Wang, Z.,Deng, J.-F.,Xu, G.Q. (2000-08-04). Evidence for dangling bond mediated dimerization of furan on the silicon (111)-(7 x 7) surface. Angewandte Chemie - International Edition 39 (15) : 2740-2743. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/1521-3773(20000804)39:15<2740" target="_blank">https://doi.org/10.1002/1521-3773(20000804)39:15<2740</a>
dc.identifier.issn14337851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/76140
dc.description.abstractThe covalent attachment of molecular species to the silicon surface by an organic radical based C-C bond formation reaction has been demonstrated with the dimerization of adsorbed furan on Si(111)-(7 x 7). This facile reaction is attributed to the recombination of pairs of adjacent mono-σ complexes at low temperature (see the reaction scheme).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/1521-3773(20000804)39:15<2740
dc.sourceScopus
dc.subjectC-C coupling
dc.subjectDimerizations furan
dc.subjectSilicon
dc.subjectSurface chemistry
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1002/1521-3773(20000804)39:15<2740
dc.description.sourcetitleAngewandte Chemie - International Edition
dc.description.volume39
dc.description.issue15
dc.description.page2740-2743
dc.description.codenACIEA
dc.identifier.isiut000088702200023
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