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Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2cc17543f
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dc.titleDual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals
dc.contributor.authorWang, L.
dc.contributor.authorLian, J.
dc.contributor.authorCui, P.
dc.contributor.authorXu, Y.
dc.contributor.authorSeo, S.
dc.contributor.authorLee, J.
dc.contributor.authorChan, Y.
dc.contributor.authorLee, H.
dc.date.accessioned2014-06-23T05:37:11Z
dc.date.available2014-06-23T05:37:11Z
dc.date.issued2012-04-28
dc.identifier.citationWang, L., Lian, J., Cui, P., Xu, Y., Seo, S., Lee, J., Chan, Y., Lee, H. (2012-04-28). Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals. Chemical Communications 48 (34) : 4052-4054. ScholarBank@NUS Repository. https://doi.org/10.1039/c2cc17543f
dc.identifier.issn13597345
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/75988
dc.description.abstractHere, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors. © 2012 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c2cc17543f
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1039/c2cc17543f
dc.description.sourcetitleChemical Communications
dc.description.volume48
dc.description.issue34
dc.description.page4052-4054
dc.description.codenCHCOF
dc.identifier.isiut000302017000004
Appears in Collections:Staff Publications

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