Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200901120
DC FieldValue
dc.titleDirect spectroscopic evidence for a photodoping mechanism in polythiophene and poly(bithiophene-alt-thienothiophene) organic semiconductor thin films involving oxygen and sorbed moisture
dc.contributor.authorZhuo, J.-M.
dc.contributor.authorZhao, L.-H.
dc.contributor.authorPng, R.-Q.
dc.contributor.authorWong, L.-Y.
dc.contributor.authorChia, P.-J.
dc.contributor.authorTang, J.-C.
dc.contributor.authorSivaramakrishnan, S.
dc.contributor.authorZhou, M.
dc.contributor.authorOu, E.C.-W.
dc.contributor.authorChua, S.-J.
dc.contributor.authorSim, W.-S.
dc.contributor.authorChua, L.-L.
dc.contributor.authorHo, P.K.-H.
dc.date.accessioned2014-06-23T05:36:49Z
dc.date.available2014-06-23T05:36:49Z
dc.date.issued2009-12-11
dc.identifier.citationZhuo, J.-M., Zhao, L.-H., Png, R.-Q., Wong, L.-Y., Chia, P.-J., Tang, J.-C., Sivaramakrishnan, S., Zhou, M., Ou, E.C.-W., Chua, S.-J., Sim, W.-S., Chua, L.-L., Ho, P.K.-H. (2009-12-11). Direct spectroscopic evidence for a photodoping mechanism in polythiophene and poly(bithiophene-alt-thienothiophene) organic semiconductor thin films involving oxygen and sorbed moisture. Advanced Materials 21 (46) : 4747-4752. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200901120
dc.identifier.issn09359648
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/75960
dc.description.abstractDirect infrared spectroscopic evidence has been obtained for photodoping of high mobility regioregular poly(3-alkylthiophene) and poly[2,5-bis(3- alkyllthiophen-2-yl) thieno (3,2-b)thiophene] with the attendant formation of hydroxide counter-ions. This reveals the central role of dissolved water, explains the key features of degradation of the electrical characteristics of organic semiconductors in the ambient (see figure), and points to possible strategies to further improve their stability. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adma.200901120
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1002/adma.200901120
dc.description.sourcetitleAdvanced Materials
dc.description.volume21
dc.description.issue46
dc.description.page4747-4752
dc.description.codenADVME
dc.identifier.isiut000273204200017
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