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Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727421
DC FieldValue
dc.titleDefect engineering for ultrashallow junctions using surfaces
dc.contributor.authorSeebauer, E.G.
dc.contributor.authorYeong, S.H.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorKwok, C.T.M.
dc.contributor.authorVaidyanathan, R.
dc.contributor.authorColombeau, B.
dc.contributor.authorChan, L.
dc.date.accessioned2014-06-19T06:13:32Z
dc.date.available2014-06-19T06:13:32Z
dc.date.issued2007
dc.identifier.citationSeebauer, E.G.,Yeong, S.H.,Srinivasan, M.P.,Kwok, C.T.M.,Vaidyanathan, R.,Colombeau, B.,Chan, L. (2007). Defect engineering for ultrashallow junctions using surfaces. ECS Transactions 6 (1) : 365-371. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.2727421" target="_blank">https://doi.org/10.1149/1.2727421</a>
dc.identifier.isbn9781566775502
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/74536
dc.description.abstractThe behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2727421
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1149/1.2727421
dc.description.sourcetitleECS Transactions
dc.description.volume6
dc.description.issue1
dc.description.page365-371
dc.identifier.isiutNOT_IN_WOS
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