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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/74487
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dc.titleAnalytical damage tables for crystalline silicon
dc.contributor.authorChan, H.Y.
dc.contributor.authorBenistant, F.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorErlebach, A.
dc.contributor.authorZechner, C.
dc.date.accessioned2014-06-19T06:13:00Z
dc.date.available2014-06-19T06:13:00Z
dc.date.issued2004-01
dc.identifier.citationChan, H.Y., Benistant, F., Srinivasan, M.P., Erlebach, A., Zechner, C. (2004-01). Analytical damage tables for crystalline silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (1) : 463-467. ScholarBank@NUS Repository.
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/74487
dc.description.abstractTables for damage profiles created in single-crystal silicon after ion implantation were investigated. The twist and tilt dependency of crystalline silicon were also taken into account. An analytical model based on the SCALP technique was also proposed which was applicable for both impurity and damage profiles for an energy range from 100 eV to 1 MeV. The as-implanted impurity and damage profiles were obtained using the MC collision code CRYSTAL-TRIM. The angle of incident beam and orientation of the wafer affected damage profiles, just like impurity profiles.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume22
dc.description.issue1
dc.description.page463-467
dc.description.codenJVTBD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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