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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/73666
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dc.titleNanoindentation study of the sputtered Cu thin films for interconnect applications
dc.contributor.authorSrinivasarao, V.
dc.contributor.authorJayaganthan, R.
dc.contributor.authorSekhar, V.N.
dc.contributor.authorMohankumar, K.
dc.contributor.authorTay, A.A.O.
dc.contributor.authorKripesh, V.
dc.date.accessioned2014-06-19T05:37:54Z
dc.date.available2014-06-19T05:37:54Z
dc.date.issued2004
dc.identifier.citationSrinivasarao, V.,Jayaganthan, R.,Sekhar, V.N.,Mohankumar, K.,Tay, A.A.O.,Kripesh, V. (2004). Nanoindentation study of the sputtered Cu thin films for interconnect applications. Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004 : 343-347. ScholarBank@NUS Repository.
dc.identifier.isbn0780388216
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/73666
dc.description.abstractCopper films of different thicknesses of 0.1, 0.5, and 1 μm were deposited by DC magnetron sputtering on the adhesion promoting Ta layer deposited on the Silicon (100) wafer. The films were annealed in vacuum at temperature 200° C and their elastic modulus and hardness were measured by Nanoindentation technique. The influence of thickness and annealing temperature on the mechanical behavior of copper thin films is explored in the present work. © 2004 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.sourcetitleProceedings of 6th Electronics Packaging Technology Conference, EPTC 2004
dc.description.page343-347
dc.identifier.isiutNOT_IN_WOS
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