Please use this identifier to cite or link to this item: https://doi.org/10.1109/SENSORDEVICES.2010.12
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dc.titleDevelopment of a sensor for layered micro-component measurement using white light interferometry
dc.contributor.authorTay, C.J.
dc.contributor.authorQuan, C.
dc.contributor.authorLi, M.
dc.date.accessioned2014-06-19T05:33:57Z
dc.date.available2014-06-19T05:33:57Z
dc.date.issued2010
dc.identifier.citationTay, C.J.,Quan, C.,Li, M. (2010). Development of a sensor for layered micro-component measurement using white light interferometry. Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010 : 21-24. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/SENSORDEVICES.2010.12" target="_blank">https://doi.org/10.1109/SENSORDEVICES.2010.12</a>
dc.identifier.isbn9780769540948
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/73340
dc.description.abstractIn this work, a white light interferometry technique has been developed for measuring the thickness of a multi-layer structure. Essentially, the method utilizes a white light source, which illuminates a test object mounted on a translation stage, using a modified Michelson interferometer configuration. Images of the object are recorded at certain prescribed vertical movements of the translation stage via a PZT. Tests are conducted on a dual layer semi-conductor wafer and a micro-gear. The results obtained show that the thickness and profile of a micro-gear fabricated from a polymer can be determined with good accuracy. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/SENSORDEVICES.2010.12
dc.sourceScopus
dc.subjectLayered structures
dc.subjectMEMS
dc.subjectMicro-gear
dc.subjectSensor
dc.subjectWhite light interferometry
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1109/SENSORDEVICES.2010.12
dc.description.sourcetitleProceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010
dc.description.page21-24
dc.identifier.isiutNOT_IN_WOS
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