Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.638516
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dc.titleA new fabrication process of silicon nanotips - NERCOM
dc.contributor.authorTay, F.E.H.
dc.contributor.authorIliescu, C.
dc.contributor.authorXu, G.
dc.contributor.authorChen, B.
dc.contributor.authorAvram, M.
dc.date.accessioned2014-06-19T05:30:42Z
dc.date.available2014-06-19T05:30:42Z
dc.date.issued2006
dc.identifier.citationTay, F.E.H., Iliescu, C., Xu, G., Chen, B., Avram, M. (2006). A new fabrication process of silicon nanotips - NERCOM. Progress in Biomedical Optics and Imaging - Proceedings of SPIE 6036 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.638516
dc.identifier.issn16057422
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/73060
dc.description.abstractThis paper presents a new fabrication process for nanotips array using notching effect of reflected charges on mask (NERCOM). The NERCOM fabrication process is based on two phenomena: flowing of thick photoresist mask after 'bake and the notching effect of the reflected charges from the photoresist mask in a plasma etching process. Heating the photoresist at different temperature and time will generate different profile of the masking layer walls. During the plasma etching process, the charges (ions and radicals) are reflected by the oblique profile of the masking layer walls and generate an undercut. This phenomenon is utilized with an isotropic etching process in a Deep RIE system to produce tips. Due to the isotropy of the process, the tips are generated. The results indicate that the radii of the tips are in the range of 40 to 60 nm.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.638516
dc.sourceScopus
dc.subjectNotching effect of reflected charges on the mask (NERCOM)
dc.subjectRIE
dc.subjectSilicon nanotips
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1117/12.638516
dc.description.sourcetitleProgress in Biomedical Optics and Imaging - Proceedings of SPIE
dc.description.volume6036
dc.description.page-
dc.identifier.isiut000236540300007
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