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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72949
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dc.titleStudy of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
dc.contributor.authorGuan, Hao
dc.contributor.authorCho, Byung Jin
dc.contributor.authorLi, M.F.
dc.contributor.authorHe, Y.D.
dc.contributor.authorXu, Zhen
dc.contributor.authorDong, Zhong
dc.date.accessioned2014-06-19T05:13:49Z
dc.date.available2014-06-19T05:13:49Z
dc.date.issued1999
dc.identifier.citationGuan, Hao,Cho, Byung Jin,Li, M.F.,He, Y.D.,Xu, Zhen,Dong, Zhong (1999). Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 81-84. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72949
dc.description.abstractThe quasi-breakdown (QB) mechanism of ultra-thin gate oxide (35 angstroms) under high field stress was investigated using DCIV technique. It was found that under various stress conditions, the charge to QB is exponentially dependent on the stressing gate voltage, while the interface state densities always reach to the same value at the onset point of QB. Thus, we conclude that quasi-breakdown in ultra-thin oxide is triggered by a critical density of interface states.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page81-84
dc.description.coden00234
dc.identifier.isiutNOT_IN_WOS
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