Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Abstract

The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 angstroms and 37 angstroms oxide and with various metal antenna structures clearly indicate plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found at serious plasma damage region.