Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72847
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dc.titlePerformance analysis of MOS-controlled bipolar power devices
dc.contributor.authorTan, Pearl
dc.contributor.authorLiang, Yung C.
dc.date.accessioned2014-06-19T05:12:40Z
dc.date.available2014-06-19T05:12:40Z
dc.date.issued1995
dc.identifier.citationTan, Pearl,Liang, Yung C. (1995). Performance analysis of MOS-controlled bipolar power devices. Proceedings of the International Conference on Power Electronics and Drive Systems 1 : 87-92. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72847
dc.description.abstractMOS-controlled bipolar power devices combine MOS and bipolar technology into monolithic structure to tap the best features from both classes of devices. The bipolar part renders high conduction current capabilities at low forward voltage while the MOSFET component makes it possible to implement voltage control with minimum gate drive requirements. In this paper, three types of MOS-controlled bipolar devices, namely the Insulated-Gate Bipolar Transistor (IGBT), the Emitter-Switched Thyristor (EST) and the N-channel MOS-controlled Thyristor (NMCT), are analysed. Certain features unique to each device are highlighted. By keeping their internal parameters as similar as possible, a comparison of their performances is also made.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Conference on Power Electronics and Drive Systems
dc.description.volume1
dc.description.page87-92
dc.description.coden85RTA
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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