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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72559
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dc.titleDesign and analysis of a double barrier quantum well infrared photodetector
dc.contributor.authorTan, L.S.
dc.contributor.authorCheah, C.W.
dc.contributor.authorKarunasiri, G.
dc.contributor.authorRaman, A.
dc.date.accessioned2014-06-19T05:09:24Z
dc.date.available2014-06-19T05:09:24Z
dc.date.issued1998
dc.identifier.citationTan, L.S.,Cheah, C.W.,Karunasiri, G.,Raman, A. (1998). Design and analysis of a double barrier quantum well infrared photodetector. Proceedings of SPIE - The International Society for Optical Engineering 3316 (2) : 840-843. ScholarBank@NUS Repository.
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72559
dc.description.abstractIn this paper, the design and analysis of a double barrier quantum well infrared photodetector is described. Analyses of the effects of the material composition, well width and barrier width on the response wavelength and oscillator strength are carried out using the transfer matrix method. The results are applied to the design of a GaAs/AlGaAs/InGaAs/AlGaAs/GaAs photodetector operating at a wavelength of 3.72 μm.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume3316
dc.description.issue2
dc.description.page840-843
dc.description.codenPSISD
dc.identifier.isiutNOT_IN_WOS
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