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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72525
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dc.titleComparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors
dc.contributor.authorOoi, J.A.
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-06-19T05:09:02Z
dc.date.available2014-06-19T05:09:02Z
dc.date.issued1997
dc.identifier.citationOoi, J.A.,Ling, C.H. (1997). Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 19-22. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72525
dc.description.abstractResults of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page19-22
dc.description.coden00267
dc.identifier.isiutNOT_IN_WOS
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