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Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.852149
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dc.titleTwo- and three-dimensional studies of a Silicon-based Chromatic Dispersion Compensator
dc.contributor.authorPng, C.E.
dc.contributor.authorLim, S.T.
dc.contributor.authorLi, E.P.
dc.contributor.authorDanner, A.J.
dc.contributor.authorOgawa, K.
dc.contributor.authorTan, Y.T.
dc.date.accessioned2014-06-19T03:31:27Z
dc.date.available2014-06-19T03:31:27Z
dc.date.issued2009
dc.identifier.citationPng, C.E.,Lim, S.T.,Li, E.P.,Danner, A.J.,Ogawa, K.,Tan, Y.T. (2009). Two- and three-dimensional studies of a Silicon-based Chromatic Dispersion Compensator. Proceedings of SPIE - The International Society for Optical Engineering 7630 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1117/12.852149" target="_blank">https://doi.org/10.1117/12.852149</a>
dc.identifier.isbn9780819480323
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72102
dc.description.abstractIn this work, we demonstrate two- and three-dimensional (3D) simulations of an active silicon-based photonic crystal chromatic dispersion compensator utilizing the free carrier dispersion effect. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz. Due to the device architecture, simulation must be carried out in 3D so as to fully encapsulate the effects of the photonic crystal contributions in the active silicon. The novel device allows waveguiding and electrical transport to be individually tailored to a large extent. © 2009 SPIE-OSA-IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.852149
dc.sourceScopus
dc.subjectChromatic dispersion compensator
dc.subjectFree carrier dispersion effect
dc.subjectIntegrated optics
dc.subjectPhotonic circuits
dc.subjectPhotonic crystal
dc.subjectSilicon photonics
dc.subjectSilicon-on-insulator
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.852149
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume7630
dc.description.page-
dc.description.codenPSISD
dc.identifier.isiutNOT_IN_WOS
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