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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1557364
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dc.titleTransport modeling of Py film with antidot array
dc.contributor.authorGuo, J.
dc.contributor.authorJalil, M.B.A.
dc.date.accessioned2014-06-19T03:31:14Z
dc.date.available2014-06-19T03:31:14Z
dc.date.issued2003-05-15
dc.identifier.citationGuo, J., Jalil, M.B.A. (2003-05-15). Transport modeling of Py film with antidot array. Journal of Applied Physics 93 (10 2) : 7450-7452. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1557364
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72083
dc.description.abstractThe formulation of a model based on the transport and anisotropic magnetoresistance (AMR) characteristics of a permalloy magnetic film was presented. The current density distribution (j) was numerically obtained from Poisson equation, while magnetization (M) was calculated using micromagnetic simulation. The linear interpolation of the M and j distributions were then combined to obtain the galvanometric effects. The inhomogeneous current density and magnetization were used for explaining the increase in the peak AMR ratio, due to the reduction in antidot spacings.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1557364
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1557364
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 2
dc.description.page7450-7452
dc.description.codenJAPIA
dc.identifier.isiut000182822300340
Appears in Collections:Staff Publications

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