Please use this identifier to cite or link to this item: https://doi.org/10.1109/EMAP.2008.4784256
DC FieldValue
dc.titleThe role ofni buffer layer between insn solder and eu metallization for hermetic wafer bonding
dc.contributor.authorYu, D.
dc.contributor.authorLee, C.
dc.contributor.authorLau, J.H.
dc.date.accessioned2014-06-19T03:30:14Z
dc.date.available2014-06-19T03:30:14Z
dc.date.issued2008
dc.identifier.citationYu, D., Lee, C., Lau, J.H. (2008). The role ofni buffer layer between insn solder and eu metallization for hermetic wafer bonding. 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 : 171-174. ScholarBank@NUS Repository. https://doi.org/10.1109/EMAP.2008.4784256
dc.identifier.isbn9781424436217
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71996
dc.description.abstractIn order to achieve low temperature hermetic sealing for MEMS and IC packaging, wafer-wafer bonding using In/Sn and Cu metallization system was investigated. We found that in order to get high bonding yield, a thin buffer layer between solder and Cu metallization is necessary except suitable bonding parameters. In this paper, diffusion phenomena between solders and metallization were studied, the conception of buffer layer for wafer eutectic wafer bonding was introduced, the effect of Ni thickness on the bonding and hermetic properties were reported. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/EMAP.2008.4784256
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/EMAP.2008.4784256
dc.description.sourcetitle2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
dc.description.page171-174
dc.identifier.isiut000264237400038
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