Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.52.04CD03
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dc.titleSwitching model of taox-based nonpolar resistive random access memory
dc.contributor.authorTong, X.
dc.contributor.authorWu, W.
dc.contributor.authorLiu, Z.
dc.contributor.authorTran, X.A.
dc.contributor.authorYu, H.Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-19T03:29:15Z
dc.date.available2014-06-19T03:29:15Z
dc.date.issued2013-04
dc.identifier.citationTong, X., Wu, W., Liu, Z., Tran, X.A., Yu, H.Y., Yeo, Y.-C. (2013-04). Switching model of taox-based nonpolar resistive random access memory. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CD03
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71912
dc.description.abstractWe report on a novel TaOx-based nonpolar resistive random access memory (RRAM) cell design with a Cr/TaOx /Al (top-to-bottom) structure. Extensive studies of the switching mechanism of the nonpolar RRAM were performed. The thermal coefficient of resistance of the RRAM in the low-resistance state is observed to adopt different polarities depending on how the preceding set operation was performed. On the basis of this observation, the coexistence of metallic ions and oxygen vacancies in the dominant filament is deduced, and a hybrid filament hypothesis is proposed for the first time to explain the observations. A switching model is provided to explain the microscopic changes in the nonpolar TaOx-based RRAM. © 2013 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.7567/JJAP.52.04CD03
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.7567/JJAP.52.04CD03
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume52
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000320002400051
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